III族氮化物半导体发光二极管特性和应用Characteristics and Applications of III-Nitride Light Emitting Diodes

作　者：	路慧敏陈丹阳
出版社：	西南交通大学出版社
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版权说明：	本书为出版图书，暂不支持在线阅读，请支持正版图书
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作者简介

暂缺《III族氮化物半导体发光二极管特性和应用Characteristics and Applications of III-Nitride Light Emitting Diodes》作者简介

内容简介

The advent of III-nitride light-emitting diodes （LEDs） has revolutionized optoelectronics， driving significant advancements in theory and practice. This book， Characteristics and Applications of III-Nitride Light Emitting Diodes， comprehensively analyzes III-Nitride LEDs' properties， challenges， and innovative potential.In Chapter 1， we begin with the characteristics of lll-nitride LEDs， exploring quantum transport and theoretical models. Chapter 2 analyzes luminescence characteristics， discussing the impact of carrier distribution nonuniformity， valence subband coupling effects， and efficiency evaluation methods for different LED types. Chapter 3 delves into advanced design strategies to improve light emission， focusing on mitigating polarization effects and enhancing surface emission in deep-ultraviolet LEDs. In Chapter 4， we cover the optimization of surface structures to improve light extraction efficiency. Finally， Chapter 5 explores the influence of LED characteristics on visible light communication...

图书目录

1 Characteristics of III-Nitride Light Emitting Diodes

2 Analysis of LED Luminescence Characteristics

2.1 The Impact of Carrier Distribution Nonuniformity on Efficiency Droop of InGaN-Based Quantum Wells Light Emitting Diodes

2.2 Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-Rich AIGaN/AIN Quantum Wells

2.3 Efficiency Evaluation for AIGaN-Based Deep Ultraviolet LEDs Considering Optical Polarization Properties

3 Light Emission Improvement by Designing LEDs' Epitaxial Structure

3.1 Design Strategies for Mitigating the Influence of Polarization Effect on GaN-Based MQW Light Emitting Diodes

3.2 Efficiency Droop Suppression of lnGaN-Based Blue Light-Emitting Diodes Using Dip-Shaped Quantum Wells

3.3 Band Engineering for Surface Emission Enhancement in A1-RichAIGaN-Based Deep-Ultraviolet Light Emitting Diodes

3.4 Enhancement of Surface Emission in Deep Ultraviolet AIGaN-Based Light Emitting Diodes with Staggered Quantum Wells

3.5 Surface Emission Enhancement for Deep Ultraviolet AIGaN-Based LEDs Using Triangular Shaped Quantum Wells

4 Light Extraction Improvement of Designing LEDs' Surface Structure

4.1 Maximizing the Light Extraction Efficiency for AIGaN- Based DUV-LEDs with Two Optimally Designed Surface Structures Under the Guidance of PSO

4.2 Enhanced Light Extraction by Adjusting Light Propagation Path for AIGaN-Based Deep Ultraviolet Light Emitting Diodes

4.3 The Dependence of Light Extraction Improvement on Optimized Surface Microstructure for AIGaN-Based UVC-LEDs Considering TM-Polarized Emission

5 Performance Improvement of Visible Light Communication by Suppressing Influence from LEDs' Characteristics

5.1 The Efficiency Droop Impact of GaN-based LEDs on the Performance of OFDM Visible Light Communication System

5.2 The Effects of LED Modulation Characteristics on the Performance of Visible Light Communication System

5.3 Alleviation of LED Nonlinearity Impact in Visible Light Communication using Companding and Predistortion

5.4 On the Study of the Relation between Linear/nonlinear PAPR Reduction and Transmission Performance for OFDM-based VLC Systems

5.5 The Efficiency Evaluation for InGaN-based LEDs and Visible Light Communication Application

5.6 Performance Improvement of Visible Light Communication System by using GaN-based LEDs with Strain Relief Layers

5.7 Performance Improvement of Carrierless Amplitude and Phase Modulation based Visible Light Communication System using Fractionally Spaced Equalizer

5.8 A Novel Optical Transmitting Antenna for Atto-cell Network of Visible Light Communication

References